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IXTH 3N120
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
g fs
C iss
V DS = 10 V; I D = 0.5 ? I D25 , Note 1
1.5
2.2
1050 1300
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
100 125
pF
1
2
3
C rss
t d(on)
25
17
50
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
15
ns
t d(off)
t f
Q g(on)
Q gs
R G = 4.7 ? (External),
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
32
18
39
9
ns
ns
nC
nC
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
Q gd
22
nC
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
b 1
b 2
R thJC
R thCK
0.25
0.8
K/W
K/W
b 1.0 1.4
1.65 2.13
2.87 3.12
C .4 .8
.040 .055
.065 .084
.113 .123
.016 .031
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V, Note 1
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
700
3
12
1.5
A
A
V
ns
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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